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 A Product Line of Diodes Incorporated
ZXMP6A13G
60V P-CHANNEL ENHANCEMENT MODE MOSFET
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ADVANCE INFORMATION
Product Summary
V(BR)DSS RDS(on) 390m @ VGS= -10V -60V 595m @ VGS= -4.5V -1.9A ID TA = 25C -2.3A
Features and Benefits
* * * * Fast switching speed Low gate drive Low input capacitance Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data Description and Applications
This MOSFET has been designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. * * * * Motor control DC-DC Converters Power management functions Uninterrupted power supply * * * * * Case: SOT223 Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.112 grams (approximate)
SOT223
D G
S
Top View Pin Out - Top View Equivalent Circuit
Ordering Information
Product ZXMP6A13GTA Marking See below Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1,000
Marking Information
ZXMP 6A13
ZXMP = Product Type Marking Code, Line 1 6A13 = Product Type Marking Code, Line 2
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
1 of 8 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13G
ADVANCE INFORMATION
Maximum Ratings
Drain-Source voltage Gate-Source voltage Continuous Drain current
@TA = 25C unless otherwise specified Symbol VDSS VGS (Note 2) TA = 70C (Note 2) (Note 1) (Note 3) (Note 2) (Note3 ) ID IDM IS ISM Value -60 20 -2.3 -1.9 -1.7 -7.8 -4.1 -7.8 Unit V V A A A A
Characteristic
VGS = 10V
Pulsed Drain current VGS= 10V Continuous Source current (Body diode) Pulsed Source current (Body diode)
Thermal Characteristics @TA = 25C unless otherwise specified
Characteristic Power dissipation Linear derating factor Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead Operating and storage temperature range
Notes:
Symbol (Note 1) PD (Note 2) (Note 1) (Note 2) (Note 4) RJA RJL TJ, TSTG
Value 2.0 16 3.9 31 62.5 32.0 9.8 -55 to 150
Unit W mW/C
C/W C
1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 2. Same as note (1), except the device is measured at t 10 sec. 3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 s. The pulse current is limited by the maximum junction temperature. 4. Thermal resistance from junction to solder-point (at the end of the drain lead).
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
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December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13G
ADVANCE INFORMATION
Thermal Characteristics
R D S (o n ) L im ite d
Max P ower Dissipation (W)
10
2 .0 1 .6 1 .2 0 .8 0 .4 0 .0
-ID Drain C urrent (A)
1
DC 1s 100m s 10m s 1m s
100m
10m
S in g le P u ls e T a m b = 2 5 C
100 s
-V D S D ra in -S o u rc e V o lta g e (V )
1
10
100
0
20
T e m p e ra tu re (C )
40
60
80
100 120 140 160
S a fe O p e ra tin g A re a
Thermal R esistance (C /W)
70 60 50 40 30 20 10 0 100 1m 10m 100m 1
D = 0 .2 S in g le P u ls e D = 0 .0 5 D = 0 .1 D = 0 .5
D e ra tin g C u rv e
Maximum P ower (W)
T a m b = 2 5 C
100
S in g le P u ls e T a m b = 2 5 C
10
P u ls e W id th (s )
10
100
1k
1 100
1m
10m 100m
P u ls e W id th (s )
1
10
100
1k
T ra n sie n t T h e rm a l Im p e d a n c e
P u ls e P o w e r D iss ip a tio n
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
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December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13G
ADVANCE INFORMATION
Electrical Characteristics @TA = 25C unless otherwise specified
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 5) Forward Transconductance (Notes 5 & 6) Diode Forward Voltage (Note 5) Reverse recovery time (Note 6) Reverse recovery charge (Note 6) DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (Note 7) Total Gate Charge (Note 7) Gate-Source Charge (Note 7) Gate-Drain Charge (Note 7) Turn-On Delay Time (Note 7) Turn-On Rise Time (Note 7) Turn-Off Delay Time (Note 7) Turn-Off Fall Time (Note 7)
Notes:
Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gfs VSD trr Qrr Ciss Coss Crss Qg Qg Qgs Qgd tD(on) tr tD(off) tf
Min -60 -1.0
Typ 1.8 -0.85 21.1 19.3 219 25.7 20.5 2.9 5.9 0.74 1.5 1.6 2.2 11.2 5.7
Max -0.5 100 0.390 0.595 -0.95
Unit V A nA V S V ns nC pF pF pF nC nC nC nC ns ns ns ns
Test Condition ID = -250A, VGS= 0V VDS= -60V, VGS= 0V VGS= 20V, VDS= 0V ID= -250A, VDS= VGS VGS= -10V, ID= -0.9A VGS= -4.5V, ID= -0.8A VDS= -15V, ID= -0.9A IS= -0.8A, VGS= 0V, TJ=25C IS= -0.9A, di/dt= 100A/s, TJ=25C
VDS= -30V, VGS= 0V f= 1MHz VGS= -4.5V VGS= -10V VDS= -30V ID= -0.9A
VDD= -30V, VGS= -10V ID= -1A, RG 6.0
5. Measured under pulsed conditions. Pulse width 300s; duty cycle 2% 6. For design aid only, not subject to production testing. 7. Switching characteristics are independent of operating junction temperatures.
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
4 of 8 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13G
ADVANCE INFORMATION
Typical Characteristics
10
T = 25C
10V 3.5V 3V
-ID Drain Current (A)
-ID Drain Current (A)
4.5V
10
T = 150C
10V 5V
1
1
4.5V 3.5V 3V 2.5V 2V
2.5V 2V
0.1
1.5V -VGS
0.1
-VGS
0.01 0.1 1 10 0.1 1 10
-VDS Drain-Source Voltage (V)
-VDS Drain-Source Voltage (V)
Output Characteristics
Normalised RDS(on) and VGS(th)
1.8 1.6 1.4 1.2 1.0 0.8
Output Characteristics
-VDS = 10V
VGS = -10V ID = -0.9A RDS(on)
-ID Drain Current (A)
1
T = 150C
VGS = VDS ID = -250uA VGS(th)
0.1 1 2
T = 25C
3
4
5
0.6 -50
0
50
100
150
-VGS Gate-Source Voltage (V)
Tj Junction Temperature (C)
Typical Transfer Characteristics
RDS(on) Drain-Source On-Resistance ()
-VGS 2V 3V 3.5V 4V 5V T = 25C
Normalised Curves v Temperature
-ISD Reverse Drain Current (A)
10
T = 150C
1.5V
2.5V
1
T = 25C
1
7V 10V
0.1
0.1
1
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
-ID Drain Current (A)
-VSD Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
5 of 8 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13G
ADVANCE INFORMATION
Typical Characteristics - continued
10
C Capacitance (pF)
f = 1MHz CISS
-VGS Gate-Source Voltage (V)
300
VGS = 0V
8 6 4 2 0
VDS = -30V ID = -0.9A
200
100
CRSS
COSS
0 0.1
1
10
0
1
2
3
4
5
6
-VDS - Drain - Source Voltage (V)
Q - Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
QG 12V 0.2 F
Current regulator
50k Same as D.U.T
VG
QGS
QGD VDS IG D.U.T ID VGS
Charge
Basic gate charge waveform
Gate charge test circuit
VDS 90% VGS RG 10% VGS tr t(on) td(of ) tr t(on) td(on) Pulse width 1 S Duty factor 0.1% RD VDS VDD
Switching time waveforms
Switching time test circuit
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
6 of 8 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13G Package Outline Dimensions ADVANCE INFORMATION
DIM A A1 A2 b b2 C
Millimeters Min Max 1.80 0.02 0.10 1.55 1.65 0.66 0.84 2.90 3.10 0.23 0.33
Inches Min Max 0.071 0.0008 0.004 0.0610 0.0649 0.026 0.033 0.114 0.122 0.009 0.013
DIM D e e1 E E1 L
Millimeters Min Max 6.30 6.70 2.30 BSC 4.60 BSC 6.70 7.30 3.30 3.70 0.90 -
Inches Min Max 0.248 0.264 0.0905 BSC 0.181 BSC 0.264 0.287 0.130 0.146 0.355 -
Suggested Pad Layout
3.8 0.15 2.0 0.079
6.3 0.248
2.0 0.079 1.5 0.059
mm inches
2.3 0.091
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
7 of 8 www.diodes.com
December 2009
(c) Diodes Incorporated
A Product Line of Diodes Incorporated
ZXMP6A13G
ADVANCE INFORMATION
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
ZXMP6A13G
Document Number DS32032 Rev. 4 - 2
8 of 8 www.diodes.com
December 2009
(c) Diodes Incorporated


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